We demonstrated the growth of wafer scale uniform MoS₂  monolayers on SiO₂ covered silicon wafers, at a range of growth temperatures  (650 ^o C-850 ^o C) with optimum grain sizes as large as 400 μm, using low pressure chemical vapor deposition (LPCVD). By controlling the partial pressure of the reactant species at the growth surface and the limiting time, we can achieve prefered monolayer growth over multilayer growth.